The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Apr. 03, 2018
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Takashi Ogura, Oizumi-machi, JP;
Mitsuru Soma, Higashimatsuyama, JP;
Dean E. Probst, West Jordan, UT (US);
Takashi Hiroshima, Ota, JP;
Peter A. Burke, Portland, OR (US);
Toshimitsu Taniguchi, Aizuwakamatsu, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
In at least one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode, and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench, and a source region of a first conductivity type disposed in a top portion of the mesa region. The apparatus can include an epitaxial layer of the first conductivity type, and a body region of a second conductivity type disposed in the mesa region and disposed between the source region and the epitaxial layer of the first conductivity type. The apparatus can include a pillar of the second conductivity type disposed in the mesa region such that a first portion of the source region is disposed lateral to the pillar and a second portion of the source region is disposed above the pillar.