The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Dec. 20, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Reinhard Ploss, Unterhaching, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, , DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01); H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 29/16 (2006.01); H01L 21/263 (2006.01); H01L 21/3115 (2006.01); H01L 29/32 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/046 (2013.01); H01L 21/0455 (2013.01); H01L 21/0475 (2013.01); H01L 21/2253 (2013.01); H01L 21/2255 (2013.01); H01L 21/263 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 21/31155 (2013.01); H01L 29/167 (2013.01); H01L 29/32 (2013.01);
Abstract
A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.