The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Jun. 22, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Seyed-Abdollah Aftabjahani, Portland, OR (US);

Amitabh Das, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 1/00 (2006.01); G11C 5/00 (2006.01); H02H 3/20 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G11C 5/00 (2013.01); H01L 27/0251 (2013.01); H02H 3/20 (2013.01); H02H 3/202 (2013.01);
Abstract

An embodiment includes an apparatus comprising: power supply pins to couple to a power supply; a protection block, including a first transistor, to: (a) determine whether voltage from the power supply pins meets a predetermined condition, and (b) in response to determining whether the predetermined condition is met, communicate a first communication to at least one of first and second function blocks; and the first function block, coupled to the protection block and the power supply pins, including a second transistor and at least one fuse that corresponds to a security key; wherein the first transistor is at least one of: (a) connected in series with at least one other transistor, and (b) having a first gate oxide breakdown voltage that is greater than a second gate oxide breakdown voltage of the second transistor. Other embodiments are described herein.


Find Patent Forward Citations

Loading…