The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Jan. 19, 2018
Applicant:

Alta Devices, Inc., Sunnyvale, CA (US);

Inventors:

Thomas Gmitter, Sunnyvale, CA (US);

Gang He, Cupertino, CA (US);

Melissa Archer, San Jose, CA (US);

Siew Neo, Sunnyvale, CA (US);

Assignee:

ALTA DEVICES, INC., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 29/00 (2006.01); C30B 33/06 (2006.01); C30B 29/42 (2006.01); C30B 29/40 (2006.01); C30B 33/08 (2006.01); C30B 29/00 (2006.01); C30B 33/10 (2006.01);
U.S. Cl.
CPC ...
C22C 29/00 (2013.01); C30B 33/06 (2013.01); C30B 29/00 (2013.01); C30B 29/40 (2013.01); C30B 29/42 (2013.01); C30B 33/08 (2013.01); C30B 33/10 (2013.01);
Abstract

Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.


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