The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Apr. 02, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yu-Ying Lin, Tainan, TW;
Yi-Liang Ye, Kaohsiung, TW;
Sung-Yuan Tsai, Yunlin County, TW;
Chun-Wei Yu, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
Zhen Wu, Kaohsiung, TW;
Tai-Yen Lin, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/26506 (2013.01); H01L 21/28587 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 29/0847 (2013.01); H01L 29/7848 (2013.01); H01L 21/02631 (2013.01); H01L 21/2855 (2013.01); H01L 21/28518 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.