The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Jun. 12, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Toshinao Ishii, Tokyo, JP;
Yasuhiko Tanuma, Kanagawa, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 23/5252 (2013.01);
Abstract
An apparatus comprises an antifuse cell comprising first and second nodes, an antifuse element, and a transistor. The antifuse element and the transistor are coupled in series between the first and second nodes. The antifuse element comprises an antifuse gate. The transistor comprises a transistor gate comprising a substantially-annular structure substantially surrounding the antifuse gate.