The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Feb. 03, 2015
Applicant:
Osaka University, Osaka, JP;
Inventors:
Assignee:
OSAKA UNIVERSITY, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/42 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 24/16 (2013.01); H01L 23/367 (2013.01); H01L 23/42 (2013.01); H01L 24/11 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 23/3736 (2013.01); H01L 23/3737 (2013.01); H01L 24/13 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/11848 (2013.01); H01L 2224/13294 (2013.01); H01L 2224/13339 (2013.01); H01L 2224/16057 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/27848 (2013.01); H01L 2224/2916 (2013.01); H01L 2224/29118 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29157 (2013.01); H01L 2224/29164 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/81007 (2013.01); H01L 2224/8183 (2013.01); H01L 2224/8184 (2013.01); H01L 2224/83007 (2013.01); H01L 2224/8383 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83193 (2013.01);
Abstract
A bonding structure () of the present invention includes a substrate (), a metal film (), a semiconductor element (). The substrate (), the metal film (), and the semiconductor element () are laminated in order just mentioned. The metal film () contains a metal diffused through stress migration, and the substrate () and the semiconductor element () are bonded together with the metal film () therebetween.