The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Mar. 21, 2017
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Po-Hao Tseng, Taichung, TW;
Kai-Chieh Hsu, Taoyuan, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 23/535 (2006.01); H01L 23/00 (2006.01); G11C 7/10 (2006.01); G11C 7/24 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); G11C 7/1006 (2013.01); G11C 7/24 (2013.01); G11C 17/16 (2013.01); H01L 23/57 (2013.01); H01L 27/11226 (2013.01);
Abstract
A semiconductor device includes a programmable memory array comprising plural memory units disposed above a substrate. One of the memory units comprises a gate electrode disposed above the substrate, a conductive portion spaced apart from the gate electrode, and a dielectric layer contacting the conductive portion and separated from the gate electrode, and the dielectric layer defining a threshold voltage of the related memory unit, wherein at least two of the memory units have different threshold voltages.