The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2019

Filed:

Mar. 15, 2016
Applicants:

Linlin Wang, Shenzhen, CN;

YE Zhou, Shenzhen, CN;

Chengyen Liu, Shenzhen, CN;

Zhenkui Meng, Shenzhen, CN;

Inventors:

Linlin Wang, Shenzhen, CN;

Ye Zhou, Shenzhen, CN;

ChengYen Liu, Shenzhen, CN;

Zhenkui Meng, Shenzhen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/42 (2012.01); G03F 1/50 (2012.01);
U.S. Cl.
CPC ...
G03F 1/42 (2013.01); G03F 1/50 (2013.01); H04R 2201/003 (2013.01);
Abstract

A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.


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