The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Sep. 20, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Martin Faccinelli, Graz, AT;
Johannes Georg Laven, Taufkirchen, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/762 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7806 (2013.01); H01L 21/304 (2013.01); H01L 21/76254 (2013.01);
Abstract
A method for splitting a semiconductor wafer includes incorporating hydrogen atoms into at least a splitting region of a semiconductor wafer. The splitting region includes a concentration of nitrogen atoms higher than 1·10cm. The method further includes splitting the semiconductor wafer at the splitting region of the semiconductor wafer.
Schulze, Hans-Joachim. (2019). Methods for splitting semiconductor devices and semiconductor device (U.S. Patent No. 10325809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10325809
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile