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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10323317 B1

PDFFull Text
Date of Patent:
Jun. 18, 2019

Filed:

Mar. 28, 2014

Gas barrier laminate, member for electronic device, and electronic device

Applicant:

Lintec Corporation, Tokyo, JP;

Inventors:

Yuuta Suzuki, Tokyo, JP;

Wataru Iwaya, Tokyo, JP;

Koichi Nagamoto, Tokyo, JP;

Takeshi Kondo, Tokyo, JP;

Assignee:

LINTEC CORPORATION, Tokyo, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Jonathan C Langman

Int. Cl.
CPC ...
C23C 14/06 (2006.01); H05K 5/06 (2006.01); H05K 5/00 (2006.01); B32B 9/00 (2006.01); B32B 7/00 (2019.01); B32B 7/02 (2019.01); B32B 7/10 (2006.01); B32B 9/04 (2006.01); B32B 19/00 (2006.01); B32B 19/04 (2006.01); B32B 27/00 (2006.01); B32B 27/06 (2006.01); B32B 27/14 (2006.01); B32B 27/16 (2006.01); B32B 27/18 (2006.01); B32B 27/28 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0676 (2013.01); B32B 7/00 (2013.01); B32B 7/02 (2013.01); B32B 7/10 (2013.01); B32B 9/00 (2013.01); B32B 9/04 (2013.01); B32B 19/00 (2013.01); B32B 19/04 (2013.01); B32B 27/00 (2013.01); B32B 27/06 (2013.01); B32B 27/14 (2013.01); B32B 27/16 (2013.01); B32B 27/18 (2013.01); B32B 27/28 (2013.01); H05K 5/0017 (2013.01); H05K 5/069 (2013.01); B32B 2250/00 (2013.01); B32B 2264/00 (2013.01); B32B 2264/10 (2013.01); B32B 2264/102 (2013.01); B32B 2264/104 (2013.01); B32B 2307/546 (2013.01); B32B 2307/7242 (2013.01); B32B 2307/7244 (2013.01); B32B 2307/7246 (2013.01); B32B 2307/7248 (2013.01); B32B 2307/732 (2013.01); B32B 2457/00 (2013.01); B32B 2457/20 (2013.01); G02F 2001/133311 (2013.01);
Abstract

The present invention is a gas barrier laminate comprising a base and a gas barrier unit, the gas barrier unit comprising at least two inorganic layers, at least one of the at least two inorganic layers being a silicon oxynitride layer, the silicon oxynitride layer including a composition-gradient region that has a thickness of 25 nm or more, the composition-gradient region being a region in which a content ratio of oxygen decreases and a content ratio of nitrogen increases in a thickness direction toward the base, and a ratio of the thickness of the composition-gradient region to the thickness of the entire silicon oxynitride layer being 0.15 or more. The present invention also relates to: an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. The present invention provides: a gas barrier laminate that exhibits a very high gas barrier capability and very high bendability, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member.

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