The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Feb. 01, 2016
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Takehiro Hasegawa, Yokohama, JP;
Koji Sakui, Setagayaku, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/11531 (2017.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2017.01); G11C 16/04 (2006.01); H01L 27/06 (2006.01); H01L 27/11546 (2017.01); H01L 27/11556 (2017.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); H01L 21/28 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11531 (2013.01); G11C 16/0483 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 27/0694 (2013.01); H01L 27/115 (2013.01); H01L 27/11546 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01); G11C 5/145 (2013.01);
Abstract
Apparatuses and methods have been disclosed. One such apparatus includes strings of memory cells formed on a topside of a substrate. Support circuitry is formed on the backside of the substrate and coupled to the strings of memory cells through vertical interconnects in the substrate. The vertical interconnects can be transistors, such as surround substrate transistors and/or surround gate transistors.