The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
May. 08, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chen-Yi Lee, Keelung, TW;
Shih-Fen Huang, Hsinchu County, TW;
Pei-Lun Wang, Hsinchu County, TW;
Dah-Chuen Ho, Hsinchu County, TW;
Yu-Chang Jong, Hsinchu, TW;
Mohammad Al-Shyoukh, Cedar Park, TX (US);
Alexander Kalnitsky, San Francisco, CA (US);
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first a first transistor configured to operate at a first threshold voltage level. The first transistor includes a first gate structure and a first drain terminal electrically coupled to the first gate structure. The semiconductor device also includes a second transistor configured to operate at a second threshold voltage level different from the first threshold voltage level. The second transistor includes a second source terminal and a second gate structure electrically coupled to the first gate structure. The first gate structure and the second gate structure comprise a first component in common, and the second gate structure further includes at least one extra component disposed over the first component. The number of the at least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.