The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Mar. 01, 2018
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Jongsun Sel, Los Gatos, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Mohan Dunga, Santa Clara, CA (US);

Fumiaki Toyama, Cupertino, CA (US);

Peter Rabkin, Cupertino, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 27/11556 (2017.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 21/7682 (2013.01); H01L 23/5226 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 21/76831 (2013.01);
Abstract

A structure includes a metal interconnect structure embedded in a lower interconnect level dielectric layer overlying a substrate, at least one material layer overlying the metal interconnect structure, a first contact level dielectric layer overlying the at least one material layer; a metal contact via structure vertically extending through the first contact level dielectric layer and the at least one material layer and contacting a top surface of the metal interconnect structure, and an encapsulated tubular cavity laterally surrounding at least a lower portion of the metal contact via structure, and vertically extending through the at least one material layer.


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