The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Dec. 20, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Mengkai Zhu, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 23/528 (2006.01); H01L 21/762 (2006.01); H01L 21/033 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/0332 (2013.01); H01L 21/743 (2013.01); H01L 21/76224 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 29/0653 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device includes: a substrate having a first semiconductor layer, an insulating layer, and a second semiconductor layer; an active device on the substrate; an interlayer dielectric (ILD) layer on the active device; a first contact plug adjacent to the active device; and a second contact plug in the ILD layer and electrically connected to the active device. Preferably, the first contact plug includes a first portion in the insulating layer and the second semiconductor layer and a second portion in the ILD layer, in which a width of the second portion is greater than a width of the first portion.