The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Aug. 28, 2017
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama, Kanagawa, JP;
Inventor:
Fumio Yamada, Kanagawa, JP;
Assignee:
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7687 (2013.01); H01L 21/76846 (2013.01); H01L 23/5223 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 27/0805 (2013.01); H01L 28/75 (2013.01); H01L 28/91 (2013.01); H01L 2224/05 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device that provides a pad electrically connected to the metal layer and a capacitor connected to the pad is disclosed. The semiconductor device provides an insulating film between the lower electrode of the capacitor and the pad. Because the insulating film protects and isolates the lower electrode from etching of the substrate via and deposition of the via metal, the lower electrode avoids voids or vacancies during formation of the via and the via metal.