The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Dec. 07, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Minghao Tang, Ballston Lake, NY (US);
Rui Chen, Clifton Park, NY (US);
Yuping Ren, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/76877 (2013.01);
Abstract
Methods of fabricating an interconnect structure. A first sacrificial layer is deposited over a dielectric layer, and a block mask is formed that covers an area on the first sacrificial layer. A second sacrificial layer is deposited over the block mask and the first sacrificial layer. After the block mask is formed, the second sacrificial layer is patterned to form a mandrel that is arranged in part on a portion of the block mask.