The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Feb. 27, 2018
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventor:

Akitsugu Ueda, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G05D 7/06 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); G05D 7/0641 (2013.01); H01L 21/2686 (2013.01); H01L 21/324 (2013.01); H01L 21/67109 (2013.01); H01L 21/67201 (2013.01); H01L 21/67745 (2013.01); H01L 21/6875 (2013.01); H01L 21/68735 (2013.01);
Abstract

An untreated semiconductor wafer is transferred from an indexer unit to a treatment chamber via a first cool chamber and a transfer chamber in this order. A treated semiconductor wafer subjected to heating treatment in the treatment chamber is transferred to the indexer unit via the transfer chamber and the first cool chamber in this order. For a predetermined time after an untreated semiconductor wafer is transferred into the first cool chamber, nitrogen gas is supplied into the first cool chamber at a large supply flow rate and exhausting from the first cool chamber is performed at a large exhaust flow rate. An oxygen concentration in the first cool chamber sharply decreases to enable the semiconductor wafer after the heating treatment to be prevented from being oxidized.


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