The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Jul. 14, 2016
Applicant:

Carl Zeiss Microscopy Gmbh, Jena, DE;

Inventor:

Giuseppe Pavia, Aalen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/06 (2006.01); H01J 37/244 (2006.01); G01N 23/2251 (2018.01);
U.S. Cl.
CPC ...
H01J 37/244 (2013.01); G01N 23/2251 (2013.01); H01J 37/06 (2013.01); G01N 2223/633 (2013.01); H01J 2237/24585 (2013.01);
Abstract

A method of determining crystallographic properties of a sample includes: generating first and second electron beams of electrons having first and second mean kinetic energies, respectively; detecting, for each of first locations of a region of the sample, a two-dimensional spatial distribution of electrons incident onto a detection area while directing the first electron beam onto the first locations; generating, for each of the first locations, first data representing the two-dimensional spatial distribution; detecting, for each of second locations of the region of the sample, a two-dimensional spatial distribution of electrons incident onto the detection area while directing the second electron beam onto the second locations; generating, for each of the second locations, second data representing the two-dimensional spatial distribution; and determining the crystallographic properties for target locations of the region based on the first data of the first locations and the second data of the second locations.


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