The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Feb. 24, 2017
Applicant:

Lasertec Corporation, Yokohama, JP;

Inventors:

Hiroki Miyai, Yokohama, JP;

Kiwamu Takehisa, Yokohama, JP;

Assignee:

Lasertec Corporation, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 19/124 (2014.01); G01N 21/88 (2006.01); G06T 7/00 (2017.01); G01N 21/956 (2006.01); H04N 5/225 (2006.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
G06T 7/0004 (2013.01); G01N 21/8806 (2013.01); G01N 21/956 (2013.01); G03F 1/84 (2013.01); H04N 5/2256 (2013.01); G01N 2021/95676 (2013.01); G06T 2207/10148 (2013.01); G06T 2207/30148 (2013.01);
Abstract

An inspection apparatus according to an aspect of the present invention includes an EUV light source, an illumination optical systemprovided to apply the EUV light to an EUV mask, a concave mirror and a convex mirrorconfigured to reflect the EUV light reflected on the EUV mask, a cameraconfigured to detect EUV light reflected on the convex mirrorand thereby take an image of the EUV mask, an AF light sourceconfigured to generate AF light having a wavelength of 450 nm to 650 nm, first and second detectorsandconfigured to detect the AF light reflected on the EUV maskthrough the concave mirror with the holeand the convex mirror, and an processing deviceconfigured to adjust a focus point of the EUV light on the EUV mask


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