The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Oct. 17, 2016
Applicant:
Ultratech, Inc., San Jose, CA (US);
Inventor:
Laurent Lecordier, Somerville, MA (US);
Assignee:
Ultratech, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C22B 5/12 (2006.01); C22B 15/00 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0272 (2013.01); C22B 5/12 (2013.01); C22B 15/00 (2013.01); C23C 16/04 (2013.01); C23C 16/45525 (2013.01); C23C 16/45527 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01);
Abstract
Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQOatop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQOlayer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.