The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Jan. 15, 2016
Applicant:

Ibiden Co., Ltd., Ogaki-shi, JP;

Inventors:

Nobuhisa Kuroda, Ogaki, JP;

Hirofumi Futamura, Ogaki, JP;

Assignee:

IBIDEN CO., LTD., Ogaki-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0271 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/49833 (2013.01); H01L 23/5389 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/81192 (2013.01); H01L 2924/15331 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3511 (2013.01); H05K 2201/09227 (2013.01); H05K 2201/10674 (2013.01);
Abstract

A printed wiring board for mounting a semiconductor element includes an insulating substrate, a first conductor structure on first side of the substrate, and a second conductor structure on second side of the substrate. The substrate has a first area and a second area outside the first area such that when a semiconductor element is mounted on the first side, the first area is directly below the element, the first structure has a first area conductor structure in the first area and a second area conductor structure in the second area, and the first structure is formed such that first ratio is set greater than second ratio, where the first ratio is obtained by dividing volume of the first area structure by area of the first area structure, and the second ratio is obtained by dividing volume of the second area structure by area of the second area structure.


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