The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Aug. 16, 2017
Applicants:
Micron Technology, Inc., Boise, ID (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Roy Meade, Boise, ID (US);
Karan Mehta, Cambridge, MA (US);
Efraim Megged, Mata, IL;
Jason Orcutt, Katonah, NY (US);
Milos Popovic, Boulder, CO (US);
Rajeev Ram, Arlington, MA (US);
Jeffrey Shainline, Boulder, CO (US);
Zvi Sternberg, Metar, IL;
Vladimir Stojanovic, Berkeley, CA (US);
Ofer Tehar-Zahav, Hadera, IL;
Assignees:
Micron Technology, Inc., Boise, ID (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 31/0368 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 27/1443 (2013.01); H01L 31/03682 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); Y02E 10/546 (2013.01); Y02P 70/521 (2015.11);
Abstract
Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.