The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Feb. 07, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Kuo-Chang Huang, Hsinchu, TW;
Fu-Peng Lu, Hsinchu, TW;
Chun-Chang Liu, Hsinchu, TW;
Chen-Chiu Huang, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/306 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02274 (2013.01); H01L 21/02277 (2013.01); H01L 21/046 (2013.01); H01L 21/30617 (2013.01); H01L 21/823864 (2013.01); H01L 29/0847 (2013.01); H01L 29/7833 (2013.01); H01L 21/823468 (2013.01);
Abstract
A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.