The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Oct. 19, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Brent A. Anderson, Jericho, VT (US);
Bassem M. Hamieh, Albany, NY (US);
Stuart A. Sieg, Albany, NY (US);
Junli Wang, Slingerlands, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66553 (2013.01); H01L 21/823431 (2013.01); H01L 29/6681 (2013.01); H01L 29/66666 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01);
Abstract
A method includes forming a plurality of fins on a substrate. The method further includes forming a plurality of deep trenches in the substrate and interposed between each fin of the plurality of fins. The method further includes forming a doped semiconductor layer having a uniform thickness, wherein the doped semiconductor layer is formed prior to removing any fins of the plurality of fins.