The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Nov. 16, 2017
Macronix International Co., Ltd., Hsinchu, TW;
Guan-Ru Lee, Kaohsiung, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A three-dimensional (3D) stacked semiconductor structure is provided. A substrate having an array area and a peripheral area is provided, and several patterned multi-layered stacks above the substrate are formed in the array area. The patterned multi-layered stacks are spaced apart from each other, and channel holes are formed between the patterned multi-layered stacks disposed adjacently. A charge trapping layer is formed on the patterned multi-layered stacks and deposited in the channel holes as liners. A polysilicon channel layer is deposited along the charge trapping layer, and conductive pads are formed on the polysilicon channel layer and respectively corresponding to the patterned multi-layered stacks. The polysilicon channel layer has a first thickness (t1), one of the conductive pads has a second thickness (t2), wherein the second thickness (t2) is larger than the first thickness (t1).