The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Mar. 14, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Ling Chiang, Hsinchu, TW;

Chun-Min Cheng, Hsinchu, TW;

Jung-Yi Guo, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of forming a three-dimensional memory device is provided. Insulating layers and sacrificial layers are stacked alternatively on a substrate. At least one first opening is formed through the insulating layers and the sacrificial layers. Protection layers are formed on surfaces of the sacrificial layers exposed by the sidewall of the first opening. A charge storage layer is formed on the sidewall of the first opening and covers the protection layers. A channel layer is formed on the charge storage layer. The sacrificial layers and the protection layers are replaced with electrode layers. A three-dimensional memory device is further provided.


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