The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Jan. 23, 2018
United Microelectronics Corp., Hsinchu, TW;
Hsuan-Chun Tseng, Taipei, TW;
Hsueh-Chun Hsiao, Hsinchu County, TW;
Tzu-Yun Chang, Hsinchu County, TW;
Chi-Cheng Huang, Kaohsiung, TW;
Ping-Chia Shih, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a plurality of isolation structures, a charge storage layer, and a conductive layer. The substrate has a memory region and a logic region. The substrate in the memory region has a plurality of semiconductor fins. The isolation structures are disposed in the substrate to isolate the semiconductor fins. The semiconductor fins are protruded beyond the isolation structures. The charge storage layer covers the semiconductor fins. The conductive layer is disposed across the semiconductor fins and the isolation structures such that the charge storage layer is disposed between the conductive layer and the semiconductor fins.