The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Mar. 14, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyun-jung Lee, Seongnam-si, KR;
Dongsoo Woo, Seoul, KR;
Jin-Seong Lee, Gyeonggi-do, KR;
Namho Jeon, Hwaseong-si, KR;
Jaeho Hong, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor memory device includes a separation member defining active regions of a substrate. Gate lines intersect the active regions and are each buried in a trench formed in the substrate. Each of the gate lines includes a lower electrode structure and an upper electrode structure on the lower electrode structure. The upper electrode structure includes a source layer substantially covering a sidewall of the trench and including a work-function adjustment element. A conductive layer is on the source layer. A work-function adjustment layer is disposed between the source layer and the conductive layer. The work-function adjustment layer includes a material different from that of the source layer and is doped with the work-function adjustment element.