The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Oct. 06, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76807 (2013.01); H01L 21/7682 (2013.01); H01L 21/76808 (2013.01); H01L 21/76835 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/76885 (2013.01); H01L 23/481 (2013.01); H01L 23/5222 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 2221/1026 (2013.01); H01L 2221/1031 (2013.01); H01L 2221/1036 (2013.01); H01L 2221/1047 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Some embodiments relate to a semiconductor device manufacturing process. In the process, a substrate is provided, and a sacrificial layer is formed over the substrate. An opening is patterned through the sacrificial layer, and the opening is filled with conductive material. The sacrificial layer is removed while the conductive material is left in place. A first dielectric layer is formed along sidewalls of the conductive material that was left in place.