The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Jan. 25, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Sebastian Naczas, Albany, NY (US);

Peng Xu, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/845 (2013.01); H01L 29/66795 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

A method is presented for forming a semiconductor structure. The method includes forming a plurality of fins over a substrate, forming one or more shallow isolation trench (STI) structures defining a first region and a second region, forming a liner dielectric and forming spacers adjacent sidewalls of the plurality of fins and adjacent the one or more STI structures. The method further includes filling the one or more STI structures with an oxide layer, and incrementally recessing the oxide layer and the spacers adjacent the plurality of fins in an alternate manner until a proximal end of the second region is detected.


Find Patent Forward Citations

Cheng, Kangguo. (2019). Forming sacrificial endpoint layer for deep sti recess (U.S. Patent No. 10312132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10312132

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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