The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Oct. 18, 2018
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Dong Seup Lee, McKinney, TX (US);
Yoshikazu Kondo, Sachse, TX (US);
Pinghai Hao, Plano, TX (US);
Sameer Pendharkar, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 21/0217 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
An electronic device, that in various embodiments includes a first semiconductor layer comprising a first group III nitride. A second semiconductor layer is located directly on the first semiconductor layer and comprises a second different group III nitride. A cap layer comprising the first group III nitride is located directly on the second semiconductor layer. A dielectric layer is located over the cap layer and directly contacts the second semiconductor layer through an opening in the cap layer.