The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Oct. 08, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Peter Ramvall, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of forming an aluminum-containing layer. The method includes providing a substrate in an atomic layer deposition (ALD) process chamber; and performing a cycle of a first step and a second step one or more times in the ALD process chamber to provide a composite layer, wherein performing the first step of the cycle includes: applying a first precursor that includes a non-aluminum-based component having a first molecular weight onto the substrate; and applying a second precursor that that includes an aluminum-based component having a second molecular weight onto the substrate, wherein the second molecular weight is lower than the first molecular weight; and wherein performing the second step of the cycle includes applying the first precursor onto the substrate.