The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Jan. 12, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yao-Wen Hsu, New Taipei, TW;
Jian-Jou Lian, Tainan, TW;
Neng-Jye Yang, Hsinchu, TW;
Kuan-Lin Chen, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semi-aqueous wet clean system and method for removing carbon-containing silicon material (e.g., plasma residue) or nitrogen-containing silicon material (e.g., plasma residue) includes a hydroxyl-terminated organic compound, a diol, and a fluoride ion donor material. The system is configured to protect silicon oxide and amorphous silicon during a post-dry-etch wet clean. The wet clean system is configured to selectively remove carbon-containing or nitrogen-containing plasma residue. pH of the wet clean system can be modified to tune selectivity for removal of carbon-containing or nitrogen-containing plasma residues. As a result, positive TEOS recession of less than about 3 nanometers may be achieved. Additionally, the wet clean system can be adapted for reclamation and subsequent reuse.