The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Aug. 20, 2015
Applicant:
Winbond Electronics Corp., Taichung, TW;
Inventor:
Shuo-Che Chang, Taichung, TW;
Assignee:
Winbond Electronics Corp., Taichung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01);
Abstract
A resistive random access memory (RRAM) includes a top electrode (TE), a bottom electrode (BE), and a transition metal oxide (TMO) layer between the top and the bottom electrodes. The RRAM further includes a metal cap layer above the top electrode and a transparent metal oxide (TCO) layer between the metal cap layer and the top electrode.
Chang, Shuo-Che. (2019). Resistive random access memory (U.S. Patent No. 10305033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10305033
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile