The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Oct. 27, 2015
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

Akram Boukai, Mountain View, CA (US);

Yuri Bunimovich, Williamsville, NY (US);

William A. Goddard, Pasadena, CA (US);

James R. Heath, South Pasadena, CA (US);

Jamil Tahir-Kheli, Los Angeles, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/26 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01);
U.S. Cl.
CPC ...
H01L 35/26 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.


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