The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Sep. 13, 2016
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Ukjin Roh, San Diego, CA (US);
Shashank Ekbote, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 21/265 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/26513 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 21/02636 (2013.01);
Abstract
Selective epitaxial growth is used to form a hetero-structured source/drain region to fill an etched recess in a silicon fin for an n-type FinFET device.