The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Mar. 24, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Victor Chiang Liang, Hsinchu, TW;
Chia-Chung Chen, Keelung, TW;
Chi-Feng Huang, Zhubei, TW;
Shu-Fang Fu, Xinpu Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device is provided. The method includes forming a gate structure over a fin structure. The method includes forming a hard mask layer over the gate structure. The hard mask layer has a first opening spaced apart from a first side of the gate structure by a first distance and a second opening spaced apart from a second side of the gate structure by a second distance that is different from the first distance. The method also includes removing the fin structure not covered by the hard mask layer. The method further includes forming a first source/drain feature in the fin structure and filling the first opening of the hard mask layer. The method further includes forming a second source/drain feature in the fin structure and filling the second opening of the hard mask layer.