The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Jun. 14, 2017
University of Electronic Science and Technology of China, Chengdu, CN;
Xiaorong Luo, Chengdu, CN;
Fu Peng, Chengdu, CN;
Chao Yang, Chengdu, CN;
Jie Wei, Chengdu, CN;
Siyu Deng, Chengdu, CN;
Dongfa Ouyang, Chengdu, CN;
Bo Zhang, Chengdu, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu, CN;
Abstract
The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.