The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
May. 08, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Wei Ting Chen, Hsinchu, TW;
Che-Cheng Chang, New Taipei, TW;
Chen-Hsiang Lu, Hsin-Chu, TW;
Yu-Cheng Liu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure having tapered damascene aperture is disclosed. The semiconductor structure including an etching stop layer over an inter-layer dielectric (ILD) layer, a low-k dielectric layer over the etching stop layer, and a tapered aperture at least going into the low-k dielectric layer; wherein the tapered aperture is filled with copper (Cu), a width of a mouth surface portion of the aperture tapers inwardly from a first, wider width to a second, narrower width at a bottom surface portion of the aperture, and the width of the bottom surface portion of the tapered aperture is less than 50 nm. Associated methods of fabricating a semiconductor structure are also disclosed.