The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Jun. 20, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Christopher W. Petz, Boise, ID (US);
Philip M. Campbell, Round Rock, TX (US);
Wei Yeeng Ng, Boise, ID (US);
Kunal Bhaskar Shrotri, Boise, ID (US);
Saurabh Keshav, Boise, ID (US);
John Mark Meldrim, Boise, ID (US);
Prakash Rau Mokhna Rau, Boise, ID (US);
Tom Jibu John, Boise, ID (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/29 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 23/291 (2013.01); H01L 21/02145 (2013.01); H01L 21/02194 (2013.01); H01L 21/02266 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract
In one embodiment, an apparatus comprises an etch stop layer comprising Aluminum Oxide and one or more of Hafnium, Silicon, or Magnesium; and a channel formed through one or more layers deposited over the etch stop layer, the channel extending to the etch stop layer.