The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Dec. 30, 2017
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Bradley David Sucher, Murphy, TX (US);

Neil L. Gardner, Lowry Crossing, TX (US);

Binghua Hu, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/30604 (2013.01); H01L 21/76205 (2013.01); H01L 21/823481 (2013.01);
Abstract

In some examples, a method includes etching a substrate to form a trench, wherein the trench includes sidewalls. The method further includes forming a first isolation region in the trench by growing a first layer of a first thickness on the sidewalls using a dry oxidation technique and depositing a second layer to fill a portion of the trench, the second layer contacting the first layer. The method further includes etching third and fourth layers atop the substrate to expose a first portion of the substrate. The method further includes growing a second isolation region in the substrate through the first portion by using a dry-wet-dry oxidation technique.


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