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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10304691 B1

PDFFull Text
Date of Patent:
May. 28, 2019

Filed:

Sep. 13, 2017

Method of etching silicon oxide and silicon nitride selectively against each other

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Taku Gohira, Miyagi, JP;

Sho Tominaga, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Pearne & Gordon LLP

Primary Examiner:

Shamim Ahmed

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32724 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01); H01L 22/26 (2013.01); H01J 37/32165 (2013.01);
Abstract

Silicon oxide and silicon nitride can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the silicon oxide of the processing target object by generating plasma of a processing gas containing carbon, hydrogen and fluorine within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the silicon nitride of the processing target object by generating the plasma of the processing gas containing carbon, hydrogen and fluorine within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.

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