The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Aug. 15, 2014
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Toshiaki Fujita, Naka, JP;

Hiroshi Tanaka, Naka, JP;

Noriaki Nagatomo, Naka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/06 (2006.01); C22C 32/00 (2006.01); G01K 7/22 (2006.01); H01C 7/00 (2006.01); H01C 7/04 (2006.01); H01C 17/12 (2006.01); H01C 1/142 (2006.01);
U.S. Cl.
CPC ...
H01C 7/043 (2013.01); C22C 32/0005 (2013.01); C22C 32/0047 (2013.01); G01K 7/223 (2013.01); H01B 1/06 (2013.01); H01C 1/142 (2013.01); H01C 7/006 (2013.01); H01C 7/008 (2013.01); H01C 7/041 (2013.01); H01C 7/042 (2013.01); H01C 17/12 (2013.01);
Abstract

A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: M(AlSi)(NO)(where 'M' represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0<v<0.3, 0.70≤y/(x+y)≤0.98, 0.45≤z≤0.55, 0<w≤0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where 'M' represents at least one of Ti, V, Cr, Mn, Fe, and Co).


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