The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Nov. 04, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Ning Wu, Folsom, CA (US);

Xin Guo, San Jose, CA (US);

Ramkarthik Ganesan, Folsom, CA (US);

Pranav Kalavade, San Jose, CA (US);

Robert Frickey, Sacramento, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/20 (2006.01); G06F 12/02 (2006.01); G06F 11/14 (2006.01); G06F 12/0804 (2016.01); G06F 12/0868 (2016.01);
U.S. Cl.
CPC ...
G06F 11/2094 (2013.01); G06F 11/141 (2013.01); G06F 11/1441 (2013.01); G06F 12/0238 (2013.01); G06F 12/0804 (2013.01); G06F 12/0868 (2013.01); G06F 2201/805 (2013.01); G06F 2212/1016 (2013.01); G06F 2212/1032 (2013.01); G06F 2212/1044 (2013.01); G06F 2212/1048 (2013.01); G06F 2212/214 (2013.01); G06F 2212/222 (2013.01); G06F 2212/7203 (2013.01); G06F 2212/7204 (2013.01); G06F 2212/7211 (2013.01); G11C 2211/5641 (2013.01);
Abstract

Technology for an apparatus is described. The apparatus can include a first non-volatile memory, a second non-volatile memory to have a write access time faster than the first non-volatile memory, and a memory controller. The memory controller can be configured to detect corrupted data in a selected data region in the first non-volatile memory. The selected data region can be associated with an increased risk of data corruption after data is written from the second non-volatile memory to the first non-volatile memory. Uncorrupted data in the second non-volatile memory that corresponds to the corrupted data in the first non-volatile memory can be identified. Data recovery in the first non-volatile memory can be performed by replacing the corrupted data in the first non-volatile memory with uncorrupted data from the second non-volatile memory.


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