The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Apr. 02, 2018
Renesas Electronics Corporation, Tokyo, JP;
Hideki Makiyama, Tokyo, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
Reliability of a semiconductor device is improved. Prepared is a substrate in which an insulating layer, a semiconductor layer, and an insulating film are laminated on a semiconductor substrate, and a device isolation region is embedded in a trench. The insulating film in a bulk region is removed; the semiconductor layer in the bulk region is removed by using a first etching liquid; and thereafter the insulating film in the SOI region and the insulating layer in the bulk region are thinned by using a second etching liquid different from the first etching liquid. An impurity is implanted into the semiconductor substrate in the SOI region, and thereafter the insulating film in the SOI region and the insulating layer in the bulk region are removed. An etching speed of each of the insulating film and the insulating layer due to the first etching liquid is smaller than an etching speed of the semiconductor layer by using the first etching liquid. An etching speed of each of the insulating film and the insulating layer due to a second etching liquid is higher than the etching speed of each of the insulating film and the insulating layer due to the first etching liquid.