The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Aug. 01, 2016
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Takashi Saito, Matsumoto, JP;

Fumihiko Momose, Nagano, JP;

Yoshitaka Nishimura, Azumino, JP;

Eiji Mochizuki, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3737 (2013.01); H01L 21/4882 (2013.01); H01L 23/3675 (2013.01);
Abstract

A semiconductor device includes a radiation plate having a rear surface roughened by a plurality of dents that overlap with each other; a laminated substrate provided on a front surface of the radiation plate and including an insulating plate, a circuit board provided on a front surface of the insulating plate, and a metal plate provided on a rear surface of the insulating plate; a semiconductor chip provided on the circuit board; a radiator; and a heat radiating material retained between the rear surface of the radiation plats and the radiator. The plurality of dents that roughen the rear surface of the radiation plate provides the rear surface with an arithmetic average roughness ranging from 1 μm to 10 μm, and each of the dents has a maximum dent depth ranging from 12 μm to 71.5 μm, and a dent width ranging from 0.17 mm to 0.72 mm.


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