The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

May. 08, 2018
Applicant:

Amkor Technology, Inc., Tempe, AZ (US);

Inventors:

Won Chul Do, Bucheon-si, KR;

Doo Hyun Park, Seongnam-si, KR;

Jong Sik Paek, Seongnam-si, KR;

Ji Hun Lee, Seoul, KR;

Seong Min Seo, Seoul, KR;

Assignee:

Amkor Technology, Inc., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/04 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4846 (2013.01); H01L 21/481 (2013.01); H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/04 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/3675 (2013.01); H01L 23/49811 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/5384 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/13 (2013.01); H01L 25/0655 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/814 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/1816 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/19105 (2013.01);
Abstract

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.


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