The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Sep. 19, 2017
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 21/3065 (2006.01); C30B 33/02 (2006.01); C30B 33/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0475 (2013.01); H01L 21/268 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); C30B 33/02 (2013.01); C30B 33/12 (2013.01);
Abstract
Provided is a manufacturing method for manufacturing a SiC substrate having a flattened surface, including etching the surface of the SiC substrate by irradiating the surface of the SiC substrate with atomic hydrogen while the SiC substrate having an off angle is heated. In the etching, the SiC substrate may be heated within a range of 800° C. or higher and 1200° C. or lower.
Fujii, Takeshi. (2019). Manufacturing method of sic substrate (U.S. Patent No. 10297450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10297450
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile