The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Oct. 20, 2014
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Toshihide Agemura, Tokyo, JP;

Masashi Sasaki, Tokyo, JP;

Daisuke Kobayashi, Tokyo, JP;

Shunsuke Sato, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/073 (2006.01); H01J 37/28 (2006.01); H01J 37/18 (2006.01);
U.S. Cl.
CPC ...
H01J 37/073 (2013.01); H01J 37/18 (2013.01); H01J 37/28 (2013.01); H01J 2237/022 (2013.01); H01J 2237/06341 (2013.01); H01J 2237/1825 (2013.01); H01J 2237/2806 (2013.01);
Abstract

The purpose of the present invention is to be able to acquire high-resolution images in a scanning electron microscope using a combination of a cold cathode (CFE) electron source and a boosting process, even at low accelerating voltage enhancing the current stability of the CFE electron source. A configuration in which a CFE electron source (), an anode electrode () at positive (+) potential, and an insulator () for isolating the anode electrode () from ground potential are accommodated within a single vacuum chamber (), and an ion pump () and a non-evaporable getter (NEG) pump () are connected to the vacuum chamber (), is employed.


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